| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an antistatic method that causes less contamination of a surface of a sample in an ion beam analysis method for analyzing a sample in its depth direction while removing the surface of the sample by radiating a primary ion beam onto the surface of the sample. <P>SOLUTION: The ion beam analysis method includes a step of forming a recess 10a where a conductive substrate 11 of a sample 10 is exposed at the bottom by radiating a focused ion beam 24a to the surface of the sample 10 and penetrating an insulation layer 12 formed on the surface of the sample 10, and radiates a metal ion beam 23a inside the recess 10a and concurrently radiates a primary ion beam 22a onto the surface of the sample 10. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
