チャンク多結晶シリコン及び多結晶シリコンチャンクをクリーニングする方法

摘要

Polycrystalline silicon fracture-piece with 0.5-35 ppbw carbon concentration on the surface, is claimed. An independent claim is also included for cleaning the polycrystalline silicon fracture-piece having carbon contamination on the surface, comprising carrying out thermal treatment of the polycrystalline silicon fracture-piece in a reactor at 350-600[deg] C under an inert gas atmosphere, where the polycrystalline silicon fracture-piece after the thermal treatment has 0.5-35 ppbw carbon concentration on the surface.