发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
A silicon carbide substrate (30) includes: an n type drift layer (32) having a first surface (S1) and a second surface (S2) opposite to each other; a p type body region (33) provided in the first surface (S1) of the n type drift layer (32); and an n type emitter region (34) provided on the p type body region (33) and separated from the n type drift layer (32) by the p type body region (33). A gate insulating film (11) is provided on the p type body region (33) so as to connect the n type drift layer (32) and the n type emitter region (34) to each other. A p type Si collector layer (70) is directly provided on the silicon carbide substrate (30) to face the second surface (S2) of the n type drift layer (32). |
申请公布号 |
EP2797117(A1) |
申请公布日期 |
2014.10.29 |
申请号 |
EP20120860644 |
申请日期 |
2012.10.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
WADA, KEIJI;HIYOSHI, TORU |
分类号 |
H01L29/739;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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