发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME |
摘要 |
Provided is a semiconductor device that has a buffer layer with which a dislocation density is decreased. The semiconductor device includes a substrate, a buffer region formed over the substrate, an active layer formed on the buffer region, and at least two electrodes formed on the active layer. The buffer region includes at least one composite layer in which a first semiconductor layer having a first lattice constant, a second semiconductor layer having a second lattice constant that is different from the first lattice constant and formed in contact with the first semiconductor layer, and a third semiconductor layer having a third lattice constant that is between the first lattice constant and the second lattice constant are sequentially stacked. |
申请公布号 |
EP2662882(A4) |
申请公布日期 |
2014.10.29 |
申请号 |
EP20120785747 |
申请日期 |
2012.05.10 |
申请人 |
FURUKAWA ELECTRIC CO., LTD.;FUJI ELECTRIC CO., LTD. |
发明人 |
KOKAWA, TAKUYA;KATOU, SADAHIRO;IWAMI, MASAYUKI;UTSUMI, MAKOTO |
分类号 |
H01L21/338;H01L21/20;H01L21/205;H01L29/10;H01L29/20;H01L29/201;H01L29/36;H01L29/778 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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