MANUFACTURING METHOD FOR GaN SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a GaN-based semiconductor device (5) includes the steps of: preparing a composite substrate (1) including: a support substrate (10) having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer (21) bonded to the support substrate (10), using an ion implantation separation method; growing at least one GaN-based semiconductor layer (40) on the GaN layer (21) of the composite substrate (1); and removing the support substrate (10) of the composite substrate (1) by dissolving the support substrate (10). Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.