| 摘要 |
<p>A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: 76500/x0.81<y<53800/x0.83 where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.</p> |
