发明名称 |
Semiconductor light emitting apparatus |
摘要 |
<p>A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.</p> |
申请公布号 |
EP2797129(A1) |
申请公布日期 |
2014.10.29 |
申请号 |
EP20140020055 |
申请日期 |
2014.04.23 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
MIYACHI, MAMORU;SAITO, TATSUMA;HAYASHI, TAKAKO;YOKOBAYASHI, YUSUKE;AKAGI, TAKANOBU;KAWAI, RYOSUKE |
分类号 |
H01L33/58;H01L33/00;H01L33/38;H01L33/60;H01L33/62 |
主分类号 |
H01L33/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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