| 摘要 |
The invention provides a multiple band gap laminating solar cell, comprising: a substrate; a lower electrode conductor stacked on the substrate; a p-type nanocrystal silicon layer to which impurities are added, wherein the p-type nanocrystal silicon layer is stacked on the lower electrode conductor; an intrinsic semiconductor layer stacked on the p-type nanocrystal silicon layer; an n-type nanocrystal silicon layer to which impurities are added, wherein the n-type nanocrystal silicon layer is stacked on the intrinsic semiconductor layer, and an anti-reflection film stacked on the n-type nanocrystal silicon layer, wherein the intrinsic semiconductor layer has an optical band gap which varies according to a change in the crystal structure thereof due to the a deposited height of the intrinsic semiconductor. There is also provided a method for forming a multiple band gap laminating solar cell, comprising: (a) forming a lower electrode conductor on a substrate; (b) forming a p-type nanocrystal silicon layer on the lower electrode conductor; (c) forming an intrinsic semiconductor layer comprising a nanocrystal silicon layer through neutral particle beam irradiation onto the p-type nanocrystal silicon layer; (d) forming an n-type nanocrystal silicon layer on the intrinsic semiconductor layer; and (e) forming an anti-reflection film on the n-type nanocrystal silicon layer, wherein (c) adjusts an optical band gap of the nanocrystal silicon layer by controlling energy to be supplied for production of the neutral particle beams according to a deposited height of the intrinsic semiconductor. |
