| 摘要 |
<p>A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.</p> |
