| 摘要 |
<p>A MOSFET (1) includes: a substrate (10) having a trench (19) formed therein and made of silicon carbide, the trench (19) being opened on one main surface (10A) side and having a side wall surface (19A); a gate insulating film (21) formed on the side wall surface (19A) in contact therewith; and a gate electrode (23) formed on the gate insulating film (21) in contact therewith, wherein a square region with each side of 100 nm in the side wall surface (19A) has a surface roughness of not more than 1.0 nm in RMS.</p> |
