| 摘要 |
<p>A submodule of a high-voltage inverter has a first sub-unit with a first energy storage device, a first series circuit of two power semiconductor switching units connected in parallel with the first energy storage device, each including a switchable power semiconductor, having the same pass-through direction, and each being conductive opposite the nominal pass-through direction. A first connection terminal is connected to the potential point between the power semiconductor switching units of the first series circuit. A second sub-unit has a second energy storage device, a second series circuit of two power semiconductor switching units connected in parallel with the second energy storage device, each including a switchable power semiconductor, having the same pass-through direction, and each being conductive opposite the nominal pass-through direction. A second connection terminal is connected to the potential point between the power semiconductor switching units of the second series circuit, limiting short circuit currents quickly, reliably, and effectively in case of a fault. The first and second sub-units are connected to each other by connections designed such that a current flow between the first connection terminal and the second connection terminal in both directions takes place only via the first energy storage device and/or the second energy storage device in a selected switching state of all power semiconductor switching units.</p> |
