发明名称 THERMAL DIODE FOR ENERGY CONVERSION
摘要 <p>Solid state thermionic energy converter semiconductor diode implementation and method for conversion of thermal energy to electric energy, and electric energy to refrigeration. In embodiments of this invention a highly doped n* region can serve as an emitter region, from which carriers can be injected into a gap region. The gap region can be p-type, intrinsic, or moderately doped n-type. A hot ohmic contact is connected to the n*-type region. A cold ohmic contact serves as a collector and is connected to the other side of the gap region. The cold ohmic contact has a recombination region formed between the cold ohmic contact and the gap region and a blocking compensation layer that reduces the thermoelectric back flow component. The heated emitter relative to the collector generates an EMF which drives current through a series load. The inventive principle works for hole conductivity, as well as for electrons.</p>
申请公布号 EP1282935(B1) 申请公布日期 2014.10.29
申请号 EP20010945922 申请日期 2001.03.06
申请人 MICROPOWER GLOBAL LIMITED 发明人 HAGELSTEIN, PETER, L.;KUCHEROV, YAN, R.
分类号 H01L35/00;H01L35/32;H01J45/00;H01L29/86;H01L35/16;H01L35/18;H01L35/20;H01L35/30;H02N3/00 主分类号 H01L35/00
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