发明名称 |
Nonvolatile memory device including sudden power off detection circuit and sudden power off detection method thereof |
摘要 |
A nonvolatile memory device includes a memory cell array comprising memory cells connected to bit lines and word lines; a word line decoder configured to apply word line voltages to the word lines; a bit line selector configured to select at least one bit line of the bit lines; a control logic configured to control the word line decoder and the bit line selector so that write data is programmed in the memory cell array; and a sudden power off (SPO) detection circuit, wherein the SPO detection circuit comprises: a sensing cell; a first driver configured to provide a first voltage to the sensing cell; and a second driver configured to provide a second voltage to the sensing cell, wherein a program state of the sensing cell becomes different depending on an order or a time difference between the first driver and the second driver being powered off. |
申请公布号 |
US8873328(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201314037544 |
申请日期 |
2013.09.26 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Shin Yong Shik;Yang Yunseok;Kwon Oh-Seong |
分类号 |
G11C11/00;G11C11/14;G11C5/14;G11C11/16 |
主分类号 |
G11C11/00 |
代理机构 |
Muir Patent Consulting, PLLC |
代理人 |
Muir Patent Consulting, PLLC |
主权项 |
1. A nonvolatile memory device comprising:
a memory cell array comprising a plurality of memory cells connected to a plurality of bit lines and a plurality of word lines; a word line decoder configured to apply word line voltages to the plurality of word lines; a bit line selector configured to select at least one bit line of the plurality of bit lines; a control logic configured to control the word line decoder and the bit line selector so that write data is programmed in the memory cell array; and a sudden power off (SPO) detection circuit, wherein the SPO detection circuit comprises: a sensing cell; a first driver configured to provide a first voltage to the sensing cell; and a second driver configured to provide a second voltage to the sensing cell, wherein a program state of the sensing cell becomes different depending on an order or a time difference between the first driver and the second driver being powered off. |
地址 |
Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR |