Etching system and method of controlling etching process condition

摘要

Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

主权项

1. An etching system comprising:
a light source configured to irradiate incident light into a target wafer; a light intensity measuring unit configured to measure intensities of interference light, the interference light being generated from light beams reflected from the target wafer when the incident light is irradiated thereon, the interference light having a wavelength; a signal processor configured to detect a time point at which an extreme value in the intensities is generated; and a controller configured to compare the time point detected by the signal processor with a reference time point corresponding to the time point detected by the signal processor and control a process condition according to the comparison result.