Film deposition apparatus, and method of depositing a film

摘要

A film deposition apparatus forming a thin film by after repeating cycles of sequentially supplying gases to a substrate on a turntable inside a vacuum chamber that includes a first supplying portion for causing the substrate to absorb a first gas containing silicon; a second supplying portion apart from the first supplying portion for supplying a second gas containing active species to produce a silicone dioxide; a separating area between the first and second supplying portions for preventing their mixture; a main heating mechanism for heating the substrate; and an auxiliary mechanism including a heat lamp above the turntable and having a wavelength range absorbable by the substrate to directly heat to be a processing temperature at which an ozone gas is thermally decomposed, wherein a maximum temperature is lower than the thermally decomposed temperature, at which, the first gas is absorbed and oxidized by the second gas.

主权项

1. A film deposition apparatus for forming a thin film by laminating layers of reaction product after repeating a plurality of cycles of sequentially supplying mutually different process gases to a substrate mounted on a turntable inside a vacuum chamber while orbitally revolving the substrate mounted on the turntable, the film deposition apparatus comprising:
a first process gas supplying portion that supplies a first process gas containing silicon to the substrate to cause the substrate to absorb the first process gas; a second process gas supplying portion that is located apart in a rotational direction of the turntable from the first process gas supplying portion, the second process gas supplying portion supplying a second process gas containing active species obtained by activating oxygen to the substrate to oxidize the first process gas absorbed by the substrate in order to produce a silicone dioxide; a separating area that is located between the first gas supplying portion and the second gas supplying portion, the separating area preventing the first process gas and the second process gas from mixing; a main heating mechanism that heats the turntable to heat the substrate through the turntable from a lower side of the substrate; and an auxiliary heating mechanism that includes a heat lamp located above the turntable so as to face an area where the substrate on the turntable passes, the heat lamp irradiating light having an absorption wavelength range absorbable by the substrate to directly heat the substrate so that the substrate has a processing temperature equal to or higher than a temperature at which an ozone gas is thermally decomposed by radiation heat generated by the irradiated light, wherein a maximum temperature of the turntable allowed for performing functions of the film deposition apparatus is lower than the temperature at which the ozone gas is thermally decomposed, and at the processing temperature, the first process gas is absorbed by the substrate and the absorbed first process gas is oxidized by the second process gas.