| 发明名称 | Semiconductor devices and methods of manufacture thereof | ||
| 摘要 | Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process. | ||
| 申请公布号 | US8871639(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201313734892 | 申请日期 | 2013.01.04 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chien Ying-Hsueh Chang;Lee Yu-Ming;Leung Man-Kit;Yang Chi-Ming |
| 分类号 | H01L21/4763;H01L23/522;H01L21/768 | 主分类号 | H01L21/4763 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: providing a workpiece including an insulating material layer disposed thereon, the insulating material layer including a trench formed therein; and forming a barrier layer on sidewalls of the trench using a surface modification process and a surface treatment process. | ||
| 地址 | Hsin-Chu TW | ||