| 发明名称 | Address output circuit and semiconductor memory device | ||
| 摘要 | A semiconductor memory device includes a signal generation unit configured to generate a toggling signal and first and second pulse signals in response to a test signal and a burst pulse signal. An address output unit may be configured to receive first to fourth input addresses and output sequentially first to fourth output addresses in response to the toggling signal and the first and second pulse signals. A repair unit may be configured to perform a repair operation on a word line selected by the first to fourth output addresses. | ||
| 申请公布号 | US8873319(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201213411551 | 申请日期 | 2012.03.03 |
| 申请人 | SK Hynix Inc. | 发明人 | Park Sang Il |
| 分类号 | G11C7/00;G11C29/34;G11C29/00;G11C29/12 | 主分类号 | G11C7/00 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory device comprising: a signal generation unit configured to generate a toggling signal and first and second pulse signals in response to a test signal and a burst pulse signal; an address output unit configured to receive first to fourth input addresses and sequentially output first to fourth output addresses in response to the toggling signal and the first and second pulse signals; and a repair unit configured to perform a repair operation on a word line selected by the first to fourth output addresses. | ||
| 地址 | Gyeonggi-do KR | ||