发明名称 |
Organic electroluminescent device and display device |
摘要 |
An electroluminescent device is provided with an anode, a cathode, and an organic layer having at least a light-emitting layer and held between the anode and the cathode. A layer with a nitrogen-containing heterocycle derivative therein is arranged between the anode and the light-emitting layer. The layer with the nitrogen-containing heterocycle derivative contained therein has a thickness greater than a hole supply layer arranged between the anode and the light-emitting layer. |
申请公布号 |
US8872423(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US200812037718 |
申请日期 |
2008.02.26 |
申请人 |
Sony Corporation |
发明人 |
Kambe Emiko;Nakamura Akifumi;Kijima Yasunori;Yamamoto Hiroshi |
分类号 |
C09K11/06;H01L51/54;H01L51/50;H01L51/52;H01L51/00 |
主分类号 |
C09K11/06 |
代理机构 |
K&L Gates LLP |
代理人 |
K&L Gates LLP |
主权项 |
1. An electroluminescent device comprising:
an anode; a cathode; and an organic layer held between said anode and said cathode, the organic layer including
a light-emitting layer,a hole supply layer arranged between said anode and the light-emitting layer and having a thickness ranging from 30 to 40 nm, the hole supply layer including a hole injection layer and a hole transport layer, andan electron supply layer containing at least one layer including a nitrogen-containing heterocycle derivative that is a benzimidazole derivative that is arranged between said cathode and said light-emitting layer, the electron supply layer having a thickness greater than a combined thickness of the hole supply layer and the light-emitting layer, wherein the electron supply layer and said organic layer are formed to satisfy the following relationship:
0.90>d1/d2>0.30 where d1 is the thickness of the electron supply layer and d2 is a thickness of said organic layer, wherein a combined thickness of the at least one layer including the nitrogen-containing heterocycle derivative ranges from 70 nm to 130 nm, and wherein the electroluminescent device has a current efficiency of at least 6.0 cd/A. |
地址 |
Tokyo JP |