| 发明名称 | Subtractive plasma etching of a blanket layer of metal or metal alloy | ||
| 摘要 | A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch. | ||
| 申请公布号 | US8871107(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201313838763 | 申请日期 | 2013.03.15 |
| 申请人 | International Business Machines Corporation | 发明人 | Fuller Nicholas C. M.;Joseph Eric A.;Miyazoe Hiroyuki;Hoinkis Mark;Yan Chun |
| 分类号 | C03C15/00;C03C25/68;C23F1/00;C23F3/00;H01L21/44;H01L21/302;H01L21/461;H01L21/768 | 主分类号 | C03C15/00 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. ;Percello, Esq. Louis J. |
| 主权项 | 1. A method of forming at least one metal or metal alloy feature in an integrated circuit, said method comprising: providing a material stack including at least an etch mask located on a blanket layer of metal or metal alloy; and removing exposed portions of the blanket layer of metal or metal alloy that are not protected by said etch mask utilizing an etch comprising a plasma, wherein said plasma comprises a hydrocarbon-containing precursor, CO or CO2 and forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during said etch. | ||
| 地址 | Armonk NY US | ||