发明名称 Nonvolatile memory device and operating method
摘要 Disclosed is an operating method of a non-volatile memory device which comprises randomizing data to store the randomized data; erasing the randomized data; and outputting erase data according to information of a flag cell of the non-volatile memory device at a read operation.
申请公布号 US8874934(B2) 申请公布日期 2014.10.28
申请号 US201012711458 申请日期 2010.02.24
申请人 Samsung Electronics Co., Ltd. 发明人 Park Jung Hoon;Lee Sung Soo
分类号 G06F12/14;H04L29/06;G08B29/00;G06F12/00;G11C16/22 主分类号 G06F12/14
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. An operating method for a non-volatile memory device comprising memory cells, the method comprising: randomizing program data to generate randomized program data, wherein the randomized program data is produced by changing bit values among the program data; storing the randomized program data in the memory cells; erasing a portion of the randomized program data to generate erase data; and during a subsequent read operation and in response to flag cell state data stored in the non-volatile memory device, selecting and performing an operation among (1) obtaining stored randomized program data from the memory cells and de-randomizing the stored randomized program data to generate the read data, and (2) obtaining the erase data from the memory cells and generating the read data from the erase data without de-randomizing the erase data, wherein the flag cell state data indicates whether the data to be obtained from the memory cells is erase data or program data.
地址 Suwon-si, Gyeonggi-do KR