Multi-tiered semiconductor apparatuses including residual silicide in semiconductor tier

摘要

Methods of forming multi-tiered semiconductor devices are described, along with apparatuses that include them. In one such method, a silicide is formed in a tier of silicon, the silicide is removed, and a device is formed at least partially in a void that was occupied by the silicide. One such apparatus includes a tier of silicon with a void between tiers of dielectric material. Residual silicide is on the tier of silicon and/or on the tiers of dielectric material and a device is formed at least partially in the void. Additional embodiments are also described.

主权项

1. An apparatus comprising:
a tier of semiconductor material between tiers of dielectric material; a void in the tier of semiconductor material between the tiers of the dielectric; residual silicide lining the void on the tier of semiconductor material and/or on the tiers of dielectric material, wherein the residual silicide lining is a di-silicide lining resulting from two rapid thermal processing (RTP) anneal processes; and a device at least partially formed in the void and over the residual silicide; wherein the tier of semiconductor material comprises a tier of polysilicon; wherein the dielectric material comprises silicon dioxide; and wherein the device comprises a polysilicon floating gate.