Scaling of bipolar transistors

摘要

Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.

主权项

1. A bipolar transistor, comprising:
a dielectric filled trench in a substrate, said dielectric filled trench surrounding and abutting a perimeter of a collector in said substrate; a base on said collector; an emitter in said base, said base extending over said trench; a dielectric capping layer on exposed regions of said substrate; and wherein said base includes (i) a single crystal extrinsic base region surrounding a single crystal intrinsic base region and (ii) an extrinsic polysilicon base region surrounding said single crystal extrinsic base region.