| 发明名称 | Three-dimensional semiconductor devices | ||
| 摘要 | Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having an etching selectivity relative to that of the substrate. A multi-layer stack including alternating insulation patterns and conductive patterns is provided on the buffer layer opposite the substrate. One or more active patterns respectively extend through the alternating insulation patterns and conductive patterns of the multi-layer stack and into the buffer layer. Related fabrication methods are also discussed. | ||
| 申请公布号 | US8872183(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201213366057 | 申请日期 | 2012.02.03 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Chang Sung-Il;Lee Changhyun;Son Byoungkeun;Lim Jin-Soo |
| 分类号 | H01L29/04;H01L21/822;H01L27/115;H01L27/06 | 主分类号 | H01L29/04 |
| 代理机构 | Myers Bigel Sibley & Sajovec, PA | 代理人 | Myers Bigel Sibley & Sajovec, PA |
| 主权项 | 1. A semiconductor device comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a material having an etching selectivity relative to that of the substrate; a multi-layer stack comprising alternating insulation patterns and conductive patterns on the buffer layer opposite the substrate; and one or more active patterns respectively extending through the alternating insulation patterns and conductive patterns of the multi-layer stack and into the buffer layer, wherein the plurality of active patterns are electrically connected to the substrate. | ||
| 地址 | KR | ||