| 发明名称 | Method of forming pattern and developer for use in the method | ||
| 摘要 | Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer. | ||
| 申请公布号 | US8871642(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201113808496 | 申请日期 | 2011.08.26 |
| 申请人 | FUJIFILM Corporation | 发明人 | Enomoto Yuichiro;Tarutani Shinji;Kamimura Sou;Kato Keita;Fujii Kana |
| 分类号 | H01L21/312;H01L21/3105;G03F7/039;G03F7/32;G03F7/40;G03F7/20;H01L29/02;G03F7/038 | 主分类号 | H01L21/312 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A method of forming a pattern, comprising: (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer, wherein the rinse liquid contains at least one solvent containing an aromatic ring as an organic solvent. | ||
| 地址 | Tokyo JP | ||