| 发明名称 | Semiconductor device and method for fabricating the same | ||
| 摘要 | A method for fabricating a semiconductor device includes forming a first interlayer dielectric layer having a conductive contact, forming a sacrifice layer having a conductive interconnection over the first interlayer dielectric layer such that the conductive interconnection is contacted with the conductive contact, removing the sacrifice layer, and forming a recess by removing a part of the conductive contact exposed by the conductive interconnection. | ||
| 申请公布号 | US8871638(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201213716962 | 申请日期 | 2012.12.17 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Nam-Jae |
| 分类号 | H01L21/4763;H01L23/48;H01L23/52;H01L29/40;H01L23/532;H01L21/768;H01L23/522;H01L27/108 | 主分类号 | H01L21/4763 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor device, comprising: forming a first interlayer dielectric layer having a conductive contact; forming a sacrifice layer having a conductive interconnection over the first interlayer dielectric layer such that the conductive interconnection is contacted with the conductive contact; removing the sacrifice layer; and forming a recess by removing a part of the conductive contact exposed by the conductive interconnection. | ||
| 地址 | Gyeonggi-do KR | ||