Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

摘要

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

主权项

1. A structure comprising:
a planar substrate; a first planar III-nitride layer with a first low bandgap energy formed on and parallel to a first surface of a substrate; a second planar III-nitride layer with a first high bandgap energy formed on and parallel to the first III-nitride layer; a plurality of V-notch grooves formed in the second planar III-nitride layer or in a combination of the second planar III-nitride layer and the first planar III-nitride layer; and a III-oxide layer formed in the V-notch groove; wherein the V-notch grooves are formed by etching the second planar III-nitride layer or the combination of the second planar III-nitride layer and the first planar III-nitride layer.