| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes word lines and interlayer insulating layers alternately stacked, a channel layer penetrating the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding the channel layer, and first charge trap layers surrounding the tunnel insulating layer, interposed between the word lines and the tunnel insulating layer, respectively, and doped with first impurities. | ||
| 申请公布号 | US8872254(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201213598414 | 申请日期 | 2012.08.29 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Ki Hong;Pyi Seung Ho;Park In Su |
| 分类号 | H01L29/792;H01L27/115 | 主分类号 | H01L29/792 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: word lines and interlayer insulating layers alternately stacked; a channel layer penetrating the word lines and the interlayer insulating layers; a tunnel insulating layer surrounding the channel layer; and first charge trap layers surrounding the tunnel insulating layer, interposed between the word lines and the tunnel insulating layer, respectively, and doped with first impurities, wherein the first charge trap layers are separated from each other. | ||
| 地址 | Gyeonggi-do KR | ||