发明名称 Display device and method for manufacturing same
摘要 A method for manufacturing a display device provided with gate wiring lines (112) disposed on a substrate to supply signals to TFTs, and a plurality of source wiring lines (111) disposed above the gate wiring lines, the method for manufacturing a display device including: a step of forming a first conductive pattern (31) that includes the gate wiring lines (112) by etching a gate metal layer with a first resist pattern as a mask; and a step of forming a second resist pattern (12) at a portion located between the source wirings (111) so as to expose a portion of an edge of an upper surface of the first conductive pattern (31) and so as to cover other parts thereof, at the aforementioned portion of the edge of the upper surface, the first conductive pattern (31) is etched off from the upper surface through an intermediate point along the direction of thickness.
申请公布号 US8872186(B2) 申请公布日期 2014.10.28
申请号 US201113989237 申请日期 2011.11.21
申请人 Sharp Kabushiki Kaisha 发明人 Yamauchi Tetsuya
分类号 H01L29/786;H01L27/12;G02F1/1368 主分类号 H01L29/786
代理机构 Chen Yoshimura LLP 代理人 Chen Yoshimura LLP
主权项 1. A method of manufacturing a display device of a type in which a plurality of pixel electrodes are driven by thin film transistors, respectively, the display device including gate wiring lines disposed on a substrate to supply signals to the thin film transistors and a plurality of source wiring lines disposed above the gate wiring lines so as to intersect with the gate wiring lines, the method comprising: forming a gate metal layer on a surface of the substrate; forming a first resist pattern so as to cover a portion of an upper surface of the gate metal layer; etching the gate metal layer using the first resist pattern as a mask to form a first conductive pattern that includes the gate wiring lines; and forming a second resist pattern partially exposing a portion of an edge of an upper surface of the first conductive pattern between the source wiring lines to be formed and covering other portions of the first conductive pattern, and etching the partially exposed portion of the edge of the upper surface of the first conductive pattern through an intermediate point of the first conductive pattern along a direction of thickness.
地址 Osaka JP