Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers

摘要

A method of fabricating a spacer structure which includes forming a dummy gate structure comprising a top surface and sidewall surfaces over a substrate and forming a spacer structure over the sidewall surfaces. Forming the spacer structure includes depositing a first oxygen-sealing layer on the dummy gate structure and removing a portion of the first oxygen-sealing layer on the top surface of the dummy gate structure, whereby the first oxygen-sealing layer remains on the sidewall surfaces. Forming the spacer structure further includes depositing an oxygen-containing layer on the first oxygen-sealing layer and the top surface of the dummy gate structure. Forming the spacer structure further includes depositing a second oxygen-sealing layer on the oxygen-containing layer and removing a portion of the second oxygen-sealing layer over the top surface of the dummy gate structure. Forming the spacer structure further includes thinning the second oxygen-sealing layer.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a gate structure over a substrate; forming a spacer structure over sidewall surfaces of the gate structure, wherein forming the spacer structure comprises:
forming a first oxygen-sealing layer on the gate structure;forming an oxygen-containing layer on the first oxygen-sealing layer;forming a second oxygen-sealing layer on the oxygen-containing layer, the second oxygen-sealing layer exposing the top surface of the gate structure; forming a silicide region in the substrate aligned with a sidewall of the oxygen-containing layer; and thinning the second oxygen-sealing layer to separate the silicide region and the second oxygen-sealing layer, wherein thinning the second oxygen-sealing layer comprises maintaining the silicide region in direct contact with the oxygen-containing layer.