Semiconductor die singulation method

摘要

In one embodiment, semiconductor die are singulated from a semiconductor wafer by forming trenches along singulation lines and initiating a cracks from within the trenches, which propagate through the semiconductor wafer in a more controlled manner.

主权项

1. A method of singulating semiconductor die from a semiconductor wafer comprising:
providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated by singulation lines, wherein the singulation lines are portions of the semiconductor wafer; forming trenches within the singulation lines; locally heating lower surfaces of the trenches to form localized stresses within the trenches without forming molten matter; and cooling the semiconductor wafer to propagate cracks generally downward and completely through the semiconductor wafer using the trenches to control crack propagation.