Method for fabricating backside-illuminated sensors

摘要

A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process.

主权项

1. A method of fabricating a backside-illuminated sensor, the method comprising the steps of:
providing a thin film semiconductor lamina having a front surface, a back surface and a thickness between the front surface and the back surface, wherein the semiconductor lamina has a first conductivity, the semiconductor lamina having a doped region formed within the semiconductor lamina at the front surface of the lamina, wherein the doped region has a second conductivity; contacting a temporary carrier to the back surface of the semiconductor lamina; forming an electrical connection to the doped region at the front side of the semiconductor lamina; removing the temporary carrier from the back surface; and fabricating a backside-illuminated sensor from the semiconductor lamina, wherein the thickness of the semiconductor lamina remains substantially unchanged during fabrication of the backside illuminated sensor.