发明名称 |
Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same |
摘要 |
A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer. |
申请公布号 |
US8871423(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201113015869 |
申请日期 |
2011.01.28 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yun Hyo-Jin;Kim Jae-Ho;Kim Young-Ho;Kim Boo-Deuk;Ryu Jin-A;Kim Myung-Sun;Baek Se-Kyung;Kim Soo-Kyung;Ham Ji-Yun |
分类号 |
G03F7/004;G03F7/38;C07C303/32;C07C309/06;C07C309/12;G03F7/039;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
Myers Bigel Sibley & Sajovec, P.A. |
代理人 |
Myers Bigel Sibley & Sajovec, P.A. |
主权项 |
1. A photoresist composition for fabricating a probe array comprising:
a photoacid generator having an onium salt comprising a sulfonium salt, which comprises a sulfonium salt cation portion represented by the formula (1) and a sulfonium salt anion portion represented by formula (2): wherein in formula (1), each A, B, and C is one of a hydroxyl group, a cyclo group or a cycloalkyl group, and in the formula (2), n is an integer from 1to 3, and X comprises a C3-C10 cycloalkyl group, an adamantyl group, or a cyclo heptane group comprising oxygen; and an i-line reactive sensitizer including butyl benzyl phthalate. |
地址 |
KR |