发明名称 Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
摘要 A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
申请公布号 US8871423(B2) 申请公布日期 2014.10.28
申请号 US201113015869 申请日期 2011.01.28
申请人 Samsung Electronics Co., Ltd. 发明人 Yun Hyo-Jin;Kim Jae-Ho;Kim Young-Ho;Kim Boo-Deuk;Ryu Jin-A;Kim Myung-Sun;Baek Se-Kyung;Kim Soo-Kyung;Ham Ji-Yun
分类号 G03F7/004;G03F7/38;C07C303/32;C07C309/06;C07C309/12;G03F7/039;G03F7/20 主分类号 G03F7/004
代理机构 Myers Bigel Sibley & Sajovec, P.A. 代理人 Myers Bigel Sibley & Sajovec, P.A.
主权项 1. A photoresist composition for fabricating a probe array comprising: a photoacid generator having an onium salt comprising a sulfonium salt, which comprises a sulfonium salt cation portion represented by the formula (1) and a sulfonium salt anion portion represented by formula (2): wherein in formula (1), each A, B, and C is one of a hydroxyl group, a cyclo group or a cycloalkyl group, and in the formula (2), n is an integer from 1to 3, and X comprises a C3-C10 cycloalkyl group, an adamantyl group, or a cyclo heptane group comprising oxygen; and an i-line reactive sensitizer including butyl benzyl phthalate.
地址 KR