SEMICONDUCTOR DEVICE

摘要

The present invention relates to a semiconductor device which includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type which is formed on one surface of the first semiconductor region, a third semiconductor region of the first conductive type which is formed on one surface of the second semiconductor region, a gate electrode which passes through the third semiconductor region in a depth direction and is located in a trench which is formed to reach the inner side of the second semiconductor region, a first insulation layer which is formed between the gate electrode and the third semiconductor region, a second insulation layer which is formed between the gate electrode and the second semiconductor region, and a fourth semiconductor region of the second conductive type which is formed on a part of one surface of the third semiconductor region. The thickness of a part of the second insulation layer is thicker than the thickness of the first insulation layer.