发明名称 |
Forming grounded through-silicon vias in a semiconductor substrate |
摘要 |
A method of forming an interposer includes providing a semiconductor substrate, the semiconductor substrate having a front surface and a back surface opposite the front surface; forming one or more through-silicon vias (TSVs) extending from the front surface into the semiconductor substrate; forming an inter-layer dielectric (ILD) layer overlying the front surface of the semiconductor substrate and the one or more TSVs; and forming an interconnect structure in the ILD layer, the interconnect structure electrically connecting the one or more TSVs to the semiconductor substrate. |
申请公布号 |
US8872345(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201113178079 |
申请日期 |
2011.07.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hsieh Chi-Chun;Wu Wei-Cheng;Yen Hsiao-Tsung;Hu Hsien-Pin;Hou Shang-Yun;Jeng Shin-Puu |
分类号 |
H01L23/48;H01L21/283;H01L21/74 |
主分类号 |
H01L23/48 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A method of forming a semiconductor device, comprising:
providing a semiconductor substrate, the semiconductor substrate having a first side and a second side opposite the first side; forming a through-silicon via (TSV) opening extending from the first side of the semiconductor substrate into the semiconductor substrate; forming a liner layer on the first side of the semiconductor substrate and along the sidewalls and bottom of the TSV opening; depositing a first conductive material layer over the liner layer in the opening to form a TSV; forming an inter-layer dielectric (ILD) layer over the first side of the semiconductor substrate; forming a via opening extending from the ILD layer into a portion of the semiconductor substrate; forming a trench opening in the ILD layer to expose a portion of the TSV; and depositing a second conductive material layer in the via and the trench openings to form an interconnect structure, the interconnect structure electrically connecting the TSV with the semiconductor substrate. |
地址 |
TW |