| 发明名称 | Method for molecular adhesion bonding at low pressure | ||
| 摘要 | A method for bonding first and second wafers by molecular adhesion. The method includes placing the wafers in an environment having a first pressure (P1) greater than a predetermined threshold pressure above which initiation of bonding wave propagation is prevented, bringing the first wafer and the second wafer into alignment and contact, and spontaneously initiating the propagation of a bonding wave between the wafers after they are in contact solely by reducing the pressure within the environment to a second pressure (P2) below the threshold pressure. | ||
| 申请公布号 | US8871611(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201314067453 | 申请日期 | 2013.10.30 |
| 申请人 | Soitec | 发明人 | Broekaart Marcel |
| 分类号 | H01L21/30;H01L21/46;H01L21/762;H01L27/146;H01L27/14;H01L21/67;H01L21/20;H01L23/544;H01L23/00 | 主分类号 | H01L21/30 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A method for bonding at least a first wafer and a second wafer by molecular adhesion, which comprises: placing the first and second wafers in an environment having a first pressure (P1) greater than a predetermined threshold pressure above which initiation of a bonding wave propagation is prevented, and then bringing the first wafer and the second wafer into alignment and contact; and spontaneously initiating the propagation of a bonding wave between the first and second wafers after the wafers are in contact solely by reducing the pressure within the environment to a second pressure (P2) below the threshold pressure. | ||
| 地址 | Bernin FR | ||