Method for manufacturing molecular memory device

摘要

According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members.

主权项

1. A method for manufacturing a molecular memory device, comprising:
forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core members extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming second wirings on side surfaces of the core members; removing portions of the sacrificial film located immediately below the second wirings to form first spaces between the first in and the second wirings; embedding, after forming the second wirings and removing the portions of the sacrificial film, a polymer serving as a memory material into the first spaces; and embedding an insulating member in a second space between the second wirings between the core members.