Method of fabricating field effect transistor with fin structure

摘要

A method of fabricating a field effect transistor with a fin structure is described. At least a fin structure is formed on a substrate. A planar insulation layer covering the fin structure is formed. A trench is formed in the insulation layer and intersects the fin structure both lengthwise. The trench is disposed over portions of the fin structure, and a lengthwise direction of the trench intersects a lengthwise direction of the fin structure, and thereby an upper portion of the fin structure is exposed to the trench. The exposed upper portion of the fin structure will serve as a gate channel region. A gate structure covering the upper portion is formed within the trench. The upper portion of the fin structure may be further trimmed.

主权项

1. A method of fabricating a field effect transistor with a fin structure, comprising:
providing a substrate; forming at least one fin structure on the substrate; forming a planar first insulation layer on the substrate to cover the fin structure; partially removing the first insulation layer to a depth to form a trench, wherein the trench is over portions of the fin structure and a lengthwise direction of the trench intersects a lengthwise direction of the fin structure, thereby to expose an upper portion of the fin structure to the trench; and forming a gate structure covering the exposed upper portion of the fin structure in the trench.