发明名称 Method of fabricating integrated optoelectronic interconnects with side mounted transducer
摘要 A method for fabricating an optical interconnect includes producing a semiconductor wafer that includes multiple first dies. Each first die includes circuitry disposed over a surface of the wafer and connected to conductive vias arranged in rows. The multiple first dies are diced by cutting the wafer across the rows of the vias, such that, in each first die, the cut vias form respective contact pads on a side face of the first die that is perpendicular to the surface. A second semiconductor die including one or more optoelectronic transducers is attached to the contact pads, so as to connect the transducers to the circuitry.
申请公布号 US8871570(B2) 申请公布日期 2014.10.28
申请号 US201213419447 申请日期 2012.03.14
申请人 Mellanox Technologies Ltd. 发明人 Levy Shmuel;Rephaeli Shai
分类号 H01L21/00;H01L23/34;H01L21/78;H01L23/522 主分类号 H01L21/00
代理机构 D. Kligler I.P. Services Ltd. 代理人 D. Kligler I.P. Services Ltd.
主权项 1. A method for fabricating an optical interconnect, the method comprising: producing a semiconductor wafer comprising multiple first dies, each first die comprising circuitry disposed over a surface of the wafer and connected to conductive vias arranged in rows; dicing the multiple first dies by cutting the wafer across the rows of the vias, such that, in each first die, the cut vias form respective contact pads on a side face of the first die that is perpendicular to the surface; and attaching to the contact pads a second semiconductor die comprising one or more optoelectronic transducers, so as to connect the transducers to the circuitry.
地址 Yokneam IL