发明名称 |
Plasma annealing of thin film solar cells |
摘要 |
Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma. |
申请公布号 |
US8871560(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201213571048 |
申请日期 |
2012.08.09 |
申请人 |
International Business Machines Corporation |
发明人 |
Ahmed Shafaat;Chey Sukjay;Deligianni Hariklia;Romankiw Lubomyr T. |
分类号 |
H01L31/032;H01L31/0749 |
主分类号 |
H01L31/032 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Alexanian Vazken |
主权项 |
1. A method for annealing a solar cell structure, comprising:
forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure, the solar cell base structure including a substrate and the Mo layer located on the substrate, and the absorber layer comprising semiconductor chalcogenide material; and annealing and sulferizing the solar cell base structure by exposing an outer layer of the solar cell base structure to a plasma formed from a gas including sulfur, the plasma formed by positioning the solar cell base structure between radio frequency (RF) coils and activating the RF coils to form a region of plasma on the outer layer of the solar cell base structure, wherein annealing and sulferizing the solar sell base structure results in a preliminary solar cell structure, and the method further comprising: forming a buffer layer on the preliminary solar cell structure; forming a transparent conductive oxide (TCO) layer on the buffer layer; and annealing the preliminary solar cell structure including the buffer layer and the TCO layer by exposing the TCO layer to a plasma formed from a gas including oxygen. |
地址 |
Armonk NY US |