P-type silicon single crystal and method of manufacturing the same

摘要

Silicon wafers having a resistivity >6 Ωcm and axially uniform resistivity are grown by the Czochralski method from a melt containing boron as the main dopant, an n-type first sub-dopant with a segregation coefficient lower than boron, and a p-type second sub-dopant with a segregation coefficient lower than the first sub-dopant.

主权项

1. A method of manufacturing a p-type silicon single crystal, comprising the steps of:
preparing a silicon melt to which boron as a main dopant, a first sub-dopant which is an n-type impurity with a smaller segregation coefficient than boron, and a second sub-dopant which is a p-type impurity with a smaller segregation coefficient than the first sub-dopant are added; and growing a silicon single crystal having resistivity not lower than 6 Ωcm from the silicon melt by the Czochralski method.