Field-effect transistor and method for manufacturing the same

摘要

A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating layer formed between the semiconductor layer and the third electrode. The insulating layer contains an aromatic polyamide comprising a substituent containing 1 to 20 carbon atoms.

主权项

1. A field-effect transistor, comprising:
a semiconductor layer including a carbon nanomaterial; a first electrode and second electrode formed in contact with said semiconductor layer; a third electrode to control current that flows between said first electrode and said second electrode; and an insulating layer formed between said semiconductor layer and said third electrode; wherein said insulating layer includes a high molecular compound shown in Chem. 1; and at least one of R1 to R8 in said high molecular compound is a substituent including 1 carbon atom to 20 carbon atoms, and the remaining substituent(s) is/are hydrogen