| 发明名称 | Methods of and semiconductor devices with ball strength improvement | ||
| 摘要 | In a method of improving ball strength of a semiconductor device, a ball pattern of a plurality of connection balls to be formed as electrical connections for the semiconductor device is received. The pattern includes a number of columns and rows crossing each other. The balls are arranged at intersections of the columns and rows. An arrangement of balls in a region of the ball pattern is modified so that the region includes no isolated balls. | ||
| 申请公布号 | US8871629(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201113291550 | 申请日期 | 2011.11.08 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yu Tsung-Yuan;Chen Hsien-Wei;Chen Ying-Ju;Liang Shih-Wei |
| 分类号 | H01L21/44;H01L21/48;H01L21/50 | 主分类号 | H01L21/44 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of improving ball strength of a semiconductor device, said method comprising: receiving a ball pattern of a plurality of connection balls to be formed as electrical connections for the semiconductor device, said pattern comprising a number of columns and rows crossing each other, said balls being arranged at intersections of said columns and rows; and modifying an arrangement of balls in a region of the ball pattern so that said region includes no isolated balls. | ||
| 地址 | TW | ||