Thin film transistor array substrate, liquid crystal display device including the same and fabricating methods thereof

摘要

A thin film transistor array substrate includes a substrate, a gate line and a data line arranged to cross each other and to define a pixel region on the substrate, a first common line disposed to be parallel to the gate line and to cross the data line, a switch element disposed at an intersection of the gate line and data line, a first pixel electrode formed to overlap the first common line, and a second pixel electrode branched from the first pixel electrode in a plurality of strips, a second common line opposite to the first common line in the center of the pixel region, a second common electrode branched from the second common line toward the pixel region into a plurality of strips, and a third common electrode branched to overlap the data line from the second common line, and a first storage electrode branched from the first common line into the pixel region, and a second storage electrode extended to overlap the first storage electrode from the first pixel electrode.

主权项

1. A method of fabricating a thin film transistor array substrate to improve the aperture ratio of a pixel region, comprising:
forming a first metal layer on a substrate with a display area and a non-display area, and patterning the first metal layer into a gate electrode, a gate line, and a first common electrode that are arranged on the display area of the substrate, and a gate pad on the non-display area of the substrate through a first mask process; sequentially forming a gate insulation film, a semiconductor layer, and a second metal layer on the substrate and forming source and drain electrodes, a second storage electrode, a channel layer, and a data line from the second metal layer and the semiconductor layer through a second mask process; sequentially forming a protective film and an organic insulation film on the substrate, and patterning the patterning the organic insulation film by performing exposing and developing steps according to a third mask process; sequentially performing first and second etching steps in which the patterned organic insulation film is used as an etch mask by using etching gases with different oxygen content ratios, in order to form contact holes in a drain electrode region, a gate pad region, and a data pad region; and sequentially forming a third metal layer and the fourth metal layer on the organic insulation film with the contact holes, and then patterning the third and fourth metal layers into a pixel electrode and a second common electrode through the fourth mask process, and wherein the organic insulation film is disposed between the pixel electrode and the second common electrode and the protective film in the pixel region.