AlN cap grown on GaN/REO/silicon substrate structure

摘要

III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.

主权项

1. III-N material grown on a silicon substrate comprising:
a single crystal silicon substrate; a single crystal rare earth oxide layer positioned on the silicon substrate, the rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate; a first layer of single crystal GaN material positioned on the surface of the single crystal rare earth oxide layer; an inter-layer of single crystal aluminum nitride (AlN) positioned on the surface of the first layer of single crystal GaN material and an additional layer of single crystal GaN material positioned on the surface of the inter-layer of single crystal aluminum nitride, the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material repeated n-times to reduce or engineer strain in a final single crystal GaN layer; and a cap layer of single crystal AlN positioned on the surface of the final single crystal GaN layer.