Electronic device including a transistor and a vertical conductive structure

摘要

An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region.

主权项

1. An electronic device including an integrated circuit comprising:
a buried conductive region; a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and the buried conductive region lies closer to the opposing surface than to the primary surface; a low-side transistor that includes a first current-carrying electrode that is a drain or a collector, wherein:
the first current-carrying electrode is electrically connected to the buried conductive region and includes a first doped region within the semiconductor layer; andthe first doped region lies closer to primary surface than to the opposing surface; a low-side vertical conductive structure extending through the semiconductor layer and electrically connected to and adjacent to the buried conductive region and to the first doped region; and a high-side transistor that includes a second current-carrying electrode that is a source or an emitter, wherein:
the second current-carrying electrode is electrically connected to the buried conductive region and includes a second doped region within the semiconductor layer; andthe second doped region lies closer to primary surface than to the opposing surface.