Deposition and reduction of mixed metal oxide thin films

摘要

In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film.

主权项

1. A method for forming a metallic film comprising two different metals on a substrate in a reaction space, the method comprising:
depositing a mixed metal oxide comprising a first metal and a second metal on the substrate, wherein the first metal is different from the second metal and the mixed metal oxide comprises a greater concentration of the first metal than the second metal and wherein the mixed metal oxide film is not a film in which distinct and separate layers of metal oxides are observable; and reducing the mixed metal oxide by heating the substrate in a hydrogen atmosphere, wherein the first metal is selected from the group consisting of Ni, Fe, Co, Cu, Ag, Cr, V, Mn, Zn, Sn, Pb, Bi, In and Cd; and wherein the second metal is selected from the group consisting of Pt, Ni, Pd, Rh, Ru, and Co.