发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 An error in the detection value of a pressure sensor can be prevented when an environmental temperature is changed. A semiconductor substrate (SUB) is a first conductivity-type semiconductor substrate. A semiconductor layer (EPI) is formed on the first surface of the semiconductor substrate (SUB). Resistance parts (RES) have second conductivity types and are formed in the semiconductor layer (EPI). The resistance parts (RES) are separated from each other. A separation region (SEP) is a first conductivity-type region formed on the semiconductor layer (EPI) and electrically separates the resistance parts (RES). A depressed part (DEP) is formed on the second surface of the semiconductor substrate (SUB) and is overlapped with the resistance parts (RES) when viewed from parallel. Also, the semiconductor layer (EPI) is an epitaxial layer.
申请公布号 KR20140125302(A) 申请公布日期 2014.10.28
申请号 KR20140044579 申请日期 2014.04.15
申请人 RENESAS ELECTRONICS CORPORATION 发明人 AKIYAMA YUTAKA;NAKASHIBA YASUTAKA
分类号 H01L29/84 主分类号 H01L29/84
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