Multi-direction wiring for replacement gate lines

摘要

A post-planarization recess etch process is employed in combination with a replacement gate scheme to enable formation of multi-directional wiring in gate electrode lines. After formation of disposable gate structures and a planarized dielectric layer, a trench extending between two disposable gate structures are formed by a combination of lithographic methods and an anisotropic etch. End portions of the trench overlap with the two disposable gate structures. After removal of the disposable gate structures, replacement gate structures are formed in gate cavities and the trench simultaneously. A contiguous gate level structure can be formed which include portions that extend along different horizontal directions.

主权项

1. A semiconductor structure comprising:
a semiconductor material portion located on a substrate and including a source region, a drain region, and a body region; a planarization dielectric layer overlying said semiconductor material portion; a gate stack structure embedded in said planarization dielectric layer and including a gate dielectric and a gate electrode embedded in said gate dielectric, wherein said gate dielectric includes a horizontal portion in contact with said body region and a vertical portion having outer sidewalls that define a lateral extent of said gate stack structure, and wherein said gate stack structure includes a first portion contacting said semiconductor material portion and extending along a first horizontal direction and a second portion extending along a second horizontal direction that is different from said first horizontal direction.