Laser processing method

摘要

The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance with electric signals, amplifying the pulsed light using an optical amplifier including an optical amplification medium, controlling the full width at half maximum of the pulsed light that is amplified and outputted by the optical amplifier to be 0.5 ns or less, and removing the metal thin film by radiating the pulsed light thus having the controlled full width at half maximum onto the metal thin film through the transparent substrate.

主权项

1. A laser processing method of processing a metal thin film formed on a transparent substrate by a pulsed light radiation, comprising the steps of:
preparing a semiconductor laser that repeatedly outputs pulsed light by being directly modulated in accordance with electric signals; preparing a MOPA fiber laser comprising, at least, an optical amplifier that includes a glass doped with a rare earth element and amplifies the pulsed light outputted from the semiconductor laser; controlling a full width at half maximum of the pulsed light outputted from the optical amplifier to be 0.2 ns or longer but shorter than 1 ns; and removing the metal thin film by radiating the pulsed light, emitted from the MOPA fiber laser, onto the metal thin film from the opposite side of the metal thin film with respect to the transparent substrate, wherein the metal thin film is composed of a high-melting-point metal such as Mo.