发明名称 Method for manufacturing composite piezoelectric substrate and piezoelectric device
摘要 A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.
申请公布号 US8872409(B2) 申请公布日期 2014.10.28
申请号 US201113091167 申请日期 2011.04.21
申请人 Murata Manufacturing Co., Ltd. 发明人 Iwamoto Takashi
分类号 H01L41/047;H03H9/17;H03H9/02;H01L41/312;H03H3/08;H01L41/332;H03H3/02 主分类号 H01L41/047
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A piezoelectric device comprising: a piezoelectric thin film formed by dividing a piezoelectric substrate at a portion having a peak concentration of an ionized element implanted in the piezoelectric substrate, the piezoelectric thin film including a divided surface at which the piezoelectric thin film was divided from the piezoelectric substrate and a surface opposite to the divided surface; a supporting substrate disposed on a side of the divided surface of the piezoelectric thin film; and a functional electrode disposed on a side of the surface of the piezoelectric thin film opposite to the divided surface.
地址 Kyoto JP